Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches
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منابع مشابه
Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches
Junction formation in deep trenches is proposed as a new means of creating a built-in drift field in silicon drift detectors (SDDs). The potential performance of this trenched drift detector (TDD) was investigated analytically and through simulations, and compared to simulations of conventional bulk-silicon drift detector (BSDD) configurations. Although the device was not experimentally realize...
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A novel device which combines advantages of Silicon Drift Detector and Silicon Avalanche Diode on the same silicon wafer is proposed. Avalanche ampliication is applied to cloud of drifting electrons in order to improve detection of radiation with low energy deposition coeecient. Principle and optimal conditions for the operation of this new detector based on Avalanche Ampliier are discussed.
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A new discrete analytic calculation of the spectral response of silicon drift detectors for X-rays is developed and compared with measurements using monochromatic synchrotron radiation in the 0.2 to 1.9 keV energy range in order to explain the observed background. The calculations are in good agreement with the measurements for secondary electron charge cloud widths σsec of (85±7) nm below and ...
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Introduction Although breast cancer awareness was raised over the last two decades and breast cancer funding has risen strongly, the United States has one of the highest breast cancer rates in the world. Each year 180,000 women are diagnosed and 44,000 women will die of breast cancer. The even more alarming statistic is that about fifty years ago the probability for a woman to be diagnosed with...
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Measurements of the energy resolution and the peak-to-background ratio of a Silicon Drift Detector at several positions and biasing voltages are performed. The origins of events with partial charge collection, which contribute to the background, are identified. A model describing the different mechanisms and the spatial distribution of partial events is developed. By optimizing the biasing volt...
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ژورنال
عنوان ژورنال: Photonics
سال: 2016
ISSN: 2304-6732
DOI: 10.3390/photonics3040054